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半导体一维纳米结构研究取得新进展,引起相关国际学术界注意

稿件来源: 发布时间:2006-03-02
  

最近,中国科学院理化技术研究所纳米有机光电子实验室在半导体一维纳米层次结构[1-2]及半导体一维纳米掺杂结构[3-6]的研究中取得了一系列新的进展,引起相关国际学术界注意。

 

1.  半导体一维纳米层次结构研究

 

半导体一维纳米结构由于其具有量子效应、尺寸效应、表面效应等可能带来一系列新颖的材料性质,其研究已引起人们的广泛重视,但由于纳米结构的小尺寸特点,在构筑基于这些新材料的纳米器件时,对其进行定位及操纵就变得非常困难。最近提出的其中一个解决方案就是合成和制备一维纳米层次结构,即发展新的纳米材料合成方法,直接制备由多个一维纳米结构单体有序组装成的大尺寸的纳米层次结构,该纳米层次结构一方面在一定程度上保持原有一维纳米结构的性质,另一方面由于纳米组装体的较大尺寸又便于对其进行操纵。最近,纳米有机光电子实验室发展了一系列新的合成方法,分别制备了“具有Si纳米线核和站立在Si纳米线上高度有序的SiO2纳米线壳层组成的纳米层次结构”(Bulk Preparation of SiSiOx Hierarchical Structures: High-Density Radially Oriented Amorphous Silica Nanowires on a Single-Crystal Silicon Nanocore)和“标状三晶ZnS纳米带层次结构”(Dart-Shaped Tricrystal ZnS Nanoribbons)。这两个工作已分别发表在最近的“德国应用化学”(Angew. Chem. Int. Ed期刊上[1-2]

 

2. 半导体一维纳米掺杂结构研究

 

构筑一维半导体纳米光电子器件,获得具有掺杂结构的一维半导体纳米材料是基础,而对于一维纳米结构的掺杂一直是本领域最具挑战性的课题。本实验最近发展了一些创新方法,已分别实现了ZnO,ZnS等半导体纳米线、纳米带的Cu,Cd,Sb等掺杂,并观察到了对其发光性质的调控。以上系列工作已分别发表在最近的Appl.Phys.Lett.,Nanotechnology等期刊上[3-6]

 

3. 以上研究工作引起国际学术界注意

 

以上系列研究工作发表后引起了相关国际学术界的注意。

Nanotechnology期刊的编辑特发专函邀请张晓宏教授撰写相关领域邀请文章,在他的来信中评述到:“张教授:……您作为本领域具有领导地位的研究者,如果您能撰写……”。

Journal of Nanoscience and Nanotechnology期刊的编辑也发函邀请张教授参与撰写有关纳米掺杂材料国际专著和研究论文,在他的来信中评述到:“张晓宏教授:……您的研究小组作为ZnO掺杂纳米材料研究领域的领导者,很荣幸邀请您……”。

 

相关邀请信

Dear Professor Zhang
 
The Editorial Board for Nanotechnology (http://www.iop.org/journals/nano) has
identified the topic of 'Synthesis and integration of nanowires' as a subject for
a forthcoming focus issue aimed at highlighting current developments within
this exciting field. As one of the leadingresearchers in this area, we would be delighted if you would consider contributing an original research article…….
 
Yours sincerely,
Professor Lars Samuelson
Professor Mahendra Sunkara
Guest Editors
 
nano@iop.org
www.iop.org/journals/nano
 
 
 

Dear Prof. Xiao-Hong Zhang:

I was asked by Dr. Nalwa, the founder of American Scientific Publishers, to edit a book on doped nanomaterials…….  As your groups are leaders in the area of  ZnO doped nanomaterials, it is my honor to invite you to contribute a chapter to this book…….  

 

Sincerely,

Wei Chen

 

Associate Editor, Journal of Nanoscience

and Nanotechnology (www.aspbs.com/jnn)

   

 

发表相关论文:

 

(1)       Hui Wang, Xiaohong Zhang*, Xiangmin Meng, Shaomin Zhou, Shikang Wu, Wensheng Shi, and Shuittong Lee*, “Bulk Preparation of SiSiOx Hierarchical Structures: High-Density Radially Oriented Amorphous Silica Nanowires on a Single-Crystal Silicon Nanocore”, Angew. Chem. Int. Ed, vol.44, pp.69346937, 2005.

(2)       X. Fan, X. M. Meng*, X. H. Zhang*, W. S. Shi, W. J. Zhang, J. A. Zapien, C. S. Lee, and S. T. Lee, “Dart-Shaped Tricrystal ZnS Nanoribbons” Angew. Chem. Int. Ed. (in press)

(3)       Kai Zou, Xiao-Ying Qi, Xiao-Feng Duan, Shao-Min Zhou, Xiao-Hong Zhang*, "Sb-induced bicrystal ZnO nanobelts" Appl. Phys. Lett., 2005, 86, 013103

(4)       Shao-Min Zhou, Xiao-Hong Zhang*, Xiang-Min Meng, Xia Fan, Kai Zou, Shi-Kang Wu, and Shuit-Tong Lee. “Fabrication and optical properties of highly crystalline ultra-long Cu-doped ZnO nanowires”. Nanotechnology, 2004, 15, 1152-1155

(5)       Shao-Min Zhou, Xiang-Min Meng, Xiao-Hong Zhang*, Xia Fan, Kai Zou, Shi-Kang Wu, and Shuit-Tong Lee, "Large-scale fabrication and characterization of Cd-doped ZnO nanocantilever arrays" Micron, 2005, 36/1, 55–59

(6)       Shao-Min Zhou, Xiao-Hong Zhang*, Xiang-Min Meng, Shi-Kang Wu, “Synthesis and optical properties of Pb-doped ZnO nanowires”, Phys. Stat. Sol.(a), 2005, 202, 3, 405-410.封面文章

 

业务处

2006-3-2

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